MOSFETs | FCB290N80

N 沟道 SuperFET® II MOSFET

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CAD Model

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概览

SuperFET® II MOSFET 是飞兆利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET 系列产品。 这项技术专用于最小化导通损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。 因此，SuperFET II MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。

  • AC-DC Power Supply
  • LED Lighting
  • Flat Panel Display TV
  • ATX
  • RDS(on) = 0.259 Ω（典型值）
  • 超低栅极电荷（典型值 Qg = 58 nC)
  • 低 Eoss（典型值 5.4 uJ @ 400V)
  • 低有效输出电容（典型值 Coss(eff.) = 240 pF)
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCB290N80

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Y

800

290

N-Channel

Single

DC: ±20, AC: ±30

4.5

17

212

-

-

-

58

2410

$2.7773

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