High Voltage MOSFETs | FCD380N60E

功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，10.2 A，380 mΩ，DPAK

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SuperFET® II MOSFET 是全新的高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的出色性能。此技术专用于最大程度降低导通损耗，提供出色的开关性能、dv/dt 速率和更高的雪崩能量。因此，SuperFET II MOSFET 非常适用于开关电源应用，如 PFC、服务器/电信电源、FPD TV 电源、ATX 电源和工业电源应用。

  • This product is general usage and suitable for many different applications.

  • TJ = 150°C 时为 650 V
  • RDS(on)最大值 = 380 mΩ
  • 超低栅极电荷（典型值 Qg = 34 nC )
  • 低有效输出电容（典型值 Coss.eff = 97 pF )
  • 100% 经过雪崩击穿测试

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCD380N60E

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

High Voltage

Standard

0

Single

0

600

380

DC: ±20, AC: ±30

3.5

10.2

106

-

-

-

34

1330

13

3000

945

60

$0.9034

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可靠性数据

Die Related Summary Data

Device: FCD380N60E

Equivalent to wafer fab process: 3A

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3A

26

4688824297

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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