MOSFETs | FCD4N60

功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，3.9 A，1.2 Ω，DPAK

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SuperFET® MOSFET 是第一代高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的卓越性能。此技术专用于最大程度降低导电损耗，提供卓越的开关性能、dv/dt 速率和更高的雪崩能量。因此，SuperFET MOSFET 非常适用于开关电源应用，如 PFC、服务器/电信电源、FPD TV 电源、ATX 电源和工业电源应用。

  • This product is general usage and suitable for many different applications.
  • 650V @TJ = 150°C
  • 典型值 RDS(on) = 1.0Ω
  • 超低栅极电荷（典型值 Qg = 12.8nC )
  • 低有效输出电容（典型值 Coss.eff = 32pF )
  • 100%经过雪崩测试
  • 符合RoHS标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCD4N60TM

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

600

1200

N-Channel

Single

±30

5

3.9

50

-

-

-

12.8

415

$0.7012

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