MOSFETs | FCD600N60Z

功率 MOSFET，N 沟道，SUPERFET® II，FAST，600 V，7.4 A，600 mΩ，DPAK

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SuperFET® II MOSFET 是全新的高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的卓越性能。此技术专用于最大程度降低导电损耗，提供卓越的开关性能、dv/dt 速率和更高的雪崩能量。因此，SuperFET II MOSFET 非常适用于开关电源应用，如 PFC、服务器/电信电源、FPD TV 电源、ATX 电源和工业电源应用。

  • This product is general usage and suitable for many different applications.
  • TJ = 150°C 时为 650 V
  • 最大值 RDS(on) = 600 mΩ
  • 超低栅极电荷（典型值 Qg = 20nC )
  • 低有效输出电容（典型值 Coss.eff = 74 pF )
  • 100% 经过雪崩击穿测试
  • 提高静电放电保护能力

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCD600N60Z

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

600

600

N-Channel

Single

DC: ±20, AC: ±30

3.5

7.4

89

-

-

-

20

840

$0.746

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