MOSFETs | FCH023N65S3L4

功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，75 A，23 mΩ，TO-247 4lead

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概览

SUPERFET III MOSFET 是安森美半导体的全新高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的卓越性能。此先进技术专用于最大程度降低导电损耗，提供卓越的开关性能，并且可以承受极端 dv/dt 速率。因此，SUPERFET III MOSFET Easy drive 系列有助于管理 EMI 问题，实现更简单的设计实施。

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS
  • 700 V @ TJ = 150 oC
  • Kelvin contact
  • Ultra Low Gate Charge (Typ. Qg = 222 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 1980 pF)
  • Optimized Capacitance
  • Kelvin contact
  • Typ. RDS(on) = 19.5 mΩ
  • 100% Avalanche Tested
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCH023N65S3L4

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Active

CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

Y

650

23

N-Channel

Single

±30

4.5

75

595

-

-

-

222

7160

$13.3343

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