High Voltage MOSFETs | FCH040N65S3

N 沟道 SuperFET® III MOSFET

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概览

SuperFET® III MOSFET 是 ON Semiconductor 利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET 系列产品。 这项先进技术专用于最小化传导损耗，提供卓越的开关性能，并承受极端 dv/dt 额定值。 因此，SuperFET III MOSFET 非常适用于系统小型化和高效化的各种功率系统。

  • Telecommunication
  • Cloud system
  • Industrial

  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS

  • 700 V（TJ=150°C 时）
  • 超低栅极电荷（典型值 Qg = 136 nC）
  • Optimized Capacitance
  • 低有效输出电容（典型值 Coss(eff.) = 1154 pF）
  • 典型值 RDS(on) = 35.4 mΩ
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCH040N65S3-F155

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Active

CAD Model

Pb

A

H

P

TO-247-3

340CH

NA

0

TUBE

450

Y

N-Channel

PowerTrench® T1

TO-247

High Voltage

Standard

0

Single

0

650

40

±30

4.5

65

417

-

-

-

136

4740

59

13600

120

-

$6.6752

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可靠性数据

Die Related Summary Data

Device: FCH040N65S3-F155

Equivalent to wafer fab process: 3A

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3A

26

4688824297

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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