High Voltage MOSFETs | FCH041N60F_F085

600 V、47 A、36 mΩ、TO-247
N 沟道 SuperFET™

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概览

SuperFET® II MOSFET 是飞兆利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET 系列产品。

  • Automotive On Board Charger
  • Automotive DC/DC converter for HEV

  • 典型值 RDS(on) = 36 mΩ（VGS = 10 V、ID = 38 A）
  • 典型值 Qg(tot) = 267 nC（VGS = 10 V、ID = 38 A）
  • 低有效输出电容（典型值 Coss(eff.) = 720 nF)
  • 100%经过雪崩测试
  • 符合 AEC Q101 标准
  • 符合RoHS标准

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCH041N60F-F085

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

N-Channel

PowerTrench® T1

TO-247

High Voltage

Standard

0

Single

0

600

41

±20

5

76

595

-

-

-

267

10900

106

1900

360

4.4

Price N/A

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可靠性数据

Die Related Summary Data

Device: FCH041N60F-F085

Equivalent to wafer fab process: 3A

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3A

26

4688824297

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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