MOSFETs | FCH165N60E

功率 MOSFET，N 沟道，SUPERFET® II，Easy Drive，600 V，23 A，165 mΩ，TO-247

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SuperFET® II MOSFET 是全新的高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的卓越性能。此工艺专用于最大程度降低导电损耗，提供卓越的开关性能、dv/dt 速率和更高的雪崩能量。因此，SuperFET II MOSFET easy-drive 系列与 SuperFET II MOSFET 系列相比，提供了略慢的升降时间。此系列通过“E”零件编号后缀表示，有助于管理 EMI 问题，和简化设计实施。对于必须绝对保证开关损耗最小的更快开关应用中，请考虑 SuperFET II MOSFET 系列。

  • Industrial Power Supplies
  • Telecom / Server Power Supplies
  • 650 V @TJ= 150°C
  • 典型值 RDS(on) = 132 mΩ
  • 超低栅极电荷（典型值 Qg = 57 nC)
  • 低有效输出电容（典型值 Coss(eff) = 204 pF)
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCH165N60E

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Active

CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

Y

600

165

N-Channel

Single

DC: ±20, AC: ±30

3.5

23

227

-

-

-

57

1830

$2.6543

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