N 沟道 SuperFET® II MOSFET

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概览

SuperFET® II MOSFET 是 Fairchild 全新的高压超结 (SJ) MOSFET 系列产品,运用电荷平衡技术,可实现卓越的低导通电阻和更低的栅极电荷性能。 这项先进技术专用于最小化传导损耗,提供卓越的开关性能,并承受极端 dv/dt 额定值和更高雪崩能量。 因此,SuperFET II MOSFET 适用于系统小型化和高效化的各种 AC-DC 功率转换。

  • Industrial Power Supplies

  • Telecom / Server Power Supplies

  • 650 V @ TJ = 150°C
  • 典型值 RDS(on) = 96 mΩ
  • 超低栅极电荷(典型值 Qg = 63 nC)
  • 低有效输出电容(典型值 Coss(eff.) = 280 pF)
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCP104N60

Active

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

Y

N-Channel

PowerTrench® T1

TO-220

High Voltage

Standard

0

Single

0

600

104

DC: ±20, AC: ±30

3.5

37

357

-

-

-

63

3130

15

8800

75

3.66

$2.5757

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