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SuperFET® II MOSFET 是飞兆利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET 系列产品。 这项技术专用于最小化导通损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。因此,与 SuperFET II MOSFET 系列相比,SuperFET II MOSFET 易驱系列提供略为缓慢的上升和下降时间。 注意以“E”作为部件编号后缀的系列产品有助于控制 EMI 问题和允许更简单的设计实施。 对于开关速度很快同时需要开关损耗必须尽可能低的应用,请考虑使用 SuperFET II MOSFET 系列。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
FCP165N60E
Active
Pb
A
H
P
TO-220-3
NA
0
TUBE
800
Y
N-Channel
PowerTrench® T1
TO-220
High Voltage
Standard
0
Single
0
600
165
DC: ±20, AC: ±30
3.5
23
227
-
-
-
57
1830
24
5300
50
8.6
$1.7746
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可靠性数据
Die Related Summary Data
Device: FCP165N60E
Equivalent to wafer fab process: 3A
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
3A
26
4688824297
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)