MOSFETs | FCP165N60E

N 沟道 SuperFET® II Easy-Drive MOSFET

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概览

SuperFET® II MOSFET 是飞兆利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET 系列产品。 这项技术专用于最小化导通损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。因此，与 SuperFET II MOSFET 系列相比，SuperFET II MOSFET 易驱系列提供略为缓慢的上升和下降时间。 注意以“E”作为部件编号后缀的系列产品有助于控制 EMI 问题和允许更简单的设计实施。 对于开关速度很快同时需要开关损耗必须尽可能低的应用，请考虑使用 SuperFET II MOSFET 系列。

  • Industrial Power Supplies
  • Telecom / Server Power Supplies
  • 650 V @TJ= 150°C
  • 典型值 RDS(on) = 132 mΩ
  • 超低栅极电荷（典型值 Qg = 57 nC）
  • 低有效输出电容（典型值 Coss(eff) = 204 pF)
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCP165N60E

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Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

Y

600

165

N-Channel

Single

DC: ±20, AC: ±30

3.5

23

227

-

-

-

57

1830

$1.7746

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