High Voltage MOSFETs | FCP165N60E

N 沟道 SuperFET® II Easy-Drive MOSFET

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概览

SuperFET® II MOSFET 是飞兆利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET 系列产品。 这项技术专用于最小化导通损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。因此，与 SuperFET II MOSFET 系列相比，SuperFET II MOSFET 易驱系列提供略为缓慢的上升和下降时间。 注意以“E”作为部件编号后缀的系列产品有助于控制 EMI 问题和允许更简单的设计实施。 对于开关速度很快同时需要开关损耗必须尽可能低的应用，请考虑使用 SuperFET II MOSFET 系列。

  • Industrial Power Supplies

  • Telecom / Server Power Supplies

  • 650 V @TJ= 150°C
  • 典型值 RDS(on) = 132 mΩ
  • 超低栅极电荷（典型值 Qg = 57 nC）
  • 低有效输出电容（典型值 Coss(eff) = 204 pF)
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCP165N60E

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CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

Y

N-Channel

PowerTrench® T1

TO-220

High Voltage

Standard

0

Single

0

600

165

DC: ±20, AC: ±30

3.5

23

227

-

-

-

57

1830

24

5300

50

8.6

$1.7746

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可靠性数据

Die Related Summary Data

Device: FCP165N60E

Equivalent to wafer fab process: 3A

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3A

26

4688824297

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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