功率 MOSFET,N 沟道,SUPERFET® II,FAST,600 V,20.2 A,199 mΩ,TO-220F

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SuperFET® II MOSFET 是全新的高电压超结 MOSFET 系列,利用先进的电荷平衡技术实现出色的低导通电阻,以及更低的门极电荷。此先进 MOSFET 不但适用于最大程度降低导通损耗,而且可以实现出色的开关性能。除了这些优点之外,与传统超结 MOSFET 相比,它还能提供更高的极端 dv/dt 速率和更大的雪崩能量。SuperFET II MOSFET 适用于各种开关电源应用,有助于实现系统小型化和更高效率。

  • This product is general usage and suitable for many different applications.

  • TJ = 150°C 时为 650 V
  • 最大值 RDS(on) = 199mΩ
  • 超低栅极电荷(典型值 Qg = 57nC )
  • 低有效输出电容(典型值 Coss.eff = 160pF )
  • 100% 经过雪崩击穿测试

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCPF190N60

Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

Y

N-Channel

PowerTrench® T1

TO-220FP

High Voltage

Standard

0

Single

0

600

199

DC: ±20, AC: ±30

3.5

20.2

39

-

-

-

57

2220

21

5100

1630

85

$1.6135

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