MOSFETs | FCPF850N80Z

功率 MOSFET，N 沟道，SUPERFET® II，800 V，6 A，850 mΩ，TO-220F

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概览

SuperFET® II MOSFET 是全新的高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的出色性能。此技术专用于最大程度降低导通损耗，提供出色的开关性能、dv/dt 速率和更高的雪崩能量。另外，内部门极电源 ESD 二极管可承受 2kV 以上的 HBM 浪涌应力。因此，SuperFET II MOSFET 非常适用于开关电源应用，如音频、笔记本电脑适配器、照明、ATX 电源和工业电源应用。

  • AC-DC Power Supplies
  • LED Lighting
  • 典型值 RDS(on) = 710 mΩ（典型值）
  • 超低栅极电荷（典型值 Qg = 22 nC)
  • 低 Eoss（典型值 2.3 uJ @ 400V)
  • 低有效输出电容（典型值 Coss(eff.) = 106 pF)
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准
  • 改进了 ESD 防护能力

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCPF850N80Z

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Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

Y

800

850

N-Channel

Single

DC: ±20, AC: ±30

4.5

6

28.4

-

-

-

22

990

$1.1756

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