MOSFETs | FDA24N50F

功率 MOSFET，N 沟道，UniFETTM，FRFET®，500 V，24 A，200 mΩ，TO-3P

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UniFETTM MOSFET 是基于平面条纹和 DMOS 技术的高压 MOSFET 系列。此 MOSFET 适用于降低导通电阻，提供更佳的开关性能以及更高的雪崩能量强度。UniFET FRFET® MOSFET 的体二极管的逆向恢复性能由于终生控制而得以提高。其 trr 小于 100nsec，逆向 dv/dt 抗扰度为 15V/ns，而普通 MOSFET 的这两个指标分别为 200nsec 和4.5V/nsec 以上。因此，在 MOSFET 体二极管的性能非常重要的某些应用中，它可以消除附加组件，提高系统可靠性。此器件系列适用于开关电力转换器应用，如功率因数校正 (PFC)、平板显示屏 (FPD) TV 电源、ATX 和电子灯镇流器。

  • This product is general usage and suitable for many different applications.
  • RDS(on) = 166mΩ （典型值）（在VGS = 10V，ID = 12A时）
  • 低栅极电荷（典型值 65nC）
  • 低 Crss（典型值 32pF）
  • 100% 经过雪崩击穿测试
  • 提高了 dv/dt 处理能力
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDA24N50F

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Active

CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

Y

500

200

N-Channel

Single

±30

5

24

270

-

-

-

65

3240

$2.1258

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