MOSFETs | FDB13AN06A0

N 沟道，PowerTrench® MOSFET，60V，62A，13.5mΩ

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N 沟道，PowerTrench® MOSFET，60V，62A，13.5mΩ， 这种最新的屏蔽门极 PowerTrench® MOSFET 具有更小的 QSYNC，卓越的软逆向恢复本征体二极管性能，开关速度快，可大幅提高同步整流的能效。

  • AC-DC商用电源-服务器和工作站
  • 工作站
  • 服务器和大型机
  • RDS(ON) = 11.5mΩ（典型值）@ VGS = 10V, ID = 62A
  • QG(tot) = 22nC（典型值）@ VGS = 10V
  • 低米勒电荷
  • 低 QRR体二极管
  • UIS 能力（单脉冲和重复脉冲）
  • 符合 AEC Q101，以前的开发类型为 82555

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDB13AN06A0

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Y

60

13.5

N-Channel

Single

20

4

62

115

-

-

-

22

1350

$0.9396

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