High Voltage MOSFETs | FDB15N50

功率 MOSFET，N 沟道，UniFETTM，500 V，15 A，380 mΩ，D2PAK

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概览

UniFETTM MOSFET 是基于平面条纹和 DMOS 技术的高压 MOSFET 系列。此 MOSFET 适用于降低导通电阻，提供更佳的开关性能以及更高的雪崩能量强度。此器件系列适用于开关电力转换器应用，如功率系数校正 (PFC)、平板显示屏 (FPD) TV 电源、ATX 和电子灯镇流器。

  • This product is general usage and suitable for many different applications.

  • 低栅极电荷 Qg 决定简单的驱动要求（典型值 33nC）
  • 经过改善的栅极、雪崩和较高的重加 dv/dt 强度
  • Reduced RDS(on) ( 330mΩ （典型值）@ VGS = 10V, ID = 7.5A)
  • 降低了米勒电容，且输入电容低（典型值 Crss = 16pF）
  • 可在低 EMI 的情况下提高开关速度
  • 175oC 额定结温

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB15N50

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Y

N-Channel

PowerTrench® T1

D2PAK

High Voltage

Standard

0

Single

0

500

380

±30

4

15

300

-

-

-

33

1850

12

5

230

16

$1.8956

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可靠性数据

Die Related Summary Data

Device: FDB15N50

Equivalent to wafer fab process: 2B

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

2B

0

59900249

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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