Low/Medium Voltage MOSFETs | FDB3682

N 沟道 PowerTrench® MOSFET 100V，32A，36mΩ

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N 沟道 Power Trench® MOSFET，100V，32A，36 mΩ，此款最新的屏蔽门极 PowerTrench® MOSFET 具有更小的 QSYNC 和软反向恢复本征体二极管性能，开关速度快，可大幅提高同步整流的效率。

  • This product is general usage and suitable for many different applications.

  • rDS(ON) = 32 mΩ（典型值）、VGS = 10 V、 ID = 32A
  • Qg(tot) = 18.5 nC（典型值）、VGS = 10 V
  • 低密勒电荷
  • 低 QRR体二极管
  • UIS 能力（单脉冲和重复脉冲）
  • 符合 AEC Q101 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB3682

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CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Y

N-Channel

PowerTrench® T1

D2PAK

Low-Medium Voltage

Standard

0

Single

0

100

36

±20

4

32

95

-

-

17

18.5

1250

4.6

90

190

45

$1.0194

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可靠性数据

Die Related Summary Data

Device: FDB3682

Equivalent to wafer fab process: 2C

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

2C

0

3698398665

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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