MOSFETs | FDB3682

N 沟道 PowerTrench® MOSFET 100V，32A，36mΩ

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N 沟道 Power Trench® MOSFET，100V，32A，36 mΩ，此款最新的屏蔽门极 PowerTrench® MOSFET 具有更小的 QSYNC 和软反向恢复本征体二极管性能，开关速度快，可大幅提高同步整流的效率。

  • This product is general usage and suitable for many different applications.
  • rDS(ON) = 32 mΩ（典型值）、VGS = 10 V、 ID = 32A
  • Qg(tot) = 18.5 nC（典型值）、VGS = 10 V
  • 低密勒电荷
  • 低 QRR体二极管
  • UIS 能力（单脉冲和重复脉冲）
  • 符合 AEC Q101 标准

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDB3682

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Y

100

36

N-Channel

Single

±20

4

32

95

-

-

17

18.5

1250

$1.0194

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