MOSFETs | FDB38N30U

功率 MOSFET，N 沟道，UniFETTM，Ultra FRFETTM，300 V，38A，120 mΩ，D2PAK

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概览

UniFETTM MOSFET 是基于平面条纹和 DMOS 工艺的高压 MOSFET 系列。此 MOSFET 适用于降低导通电阻，提供更佳的开关性能以及更高的雪崩能量强度。UniFET Ultra FRFETTM MOSFET 具有卓越的体二极管逆向恢复性能。其 trr 小于 50nsec，逆向 dv/dt 抗扰度为 20V/nsec，而普通 MOSFET 的这两个指标分别为 200nsec 和 4.5V/nsec 以上。因此，需要 MOSFET 体二极管性能提高的某些应用中，UniFET Ultra FRFET MOSFET 可以消除附加组件，提高系统可靠性。此器件系列适用于开关电力转换器应用，如功率因数校正 (PFC)、平板显示屏 (FPD) TV 电源、ATX 和电子灯镇流器。

  • This product is general usage and suitable for many different applications.
  • RDS(on) = 120 mΩ （最大值），需 VGS = 10 V、ID = 19 A栅极电荷低（典型值：56nC)
  • 低 Crss（典型值55pF)
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDB38N30U

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Y

300

120

N-Channel

Single

±30

5

38

313

-

-

-

56

2510

$1.3598

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