MOSFETs | FDB5800

N 沟道，PowerTrench® MOSFET，逻辑电平，60V，80A，6mΩ

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概览

N 沟道，PowerTrench® MOSFET，60V，80A，6mΩ，这种最新的屏蔽门极 PowerTrench® MOSFET 具有更小的 QSYNC，卓越的软逆向恢复本征体二极管性能，开关速度快，可大幅提高同步整流的能效。

  • AC-DC商用电源
  • 运动控制-工业电机
  • 其他工业
  • 不间断电源
  • RDS(on) = 4.6mΩ （典型值） @ VGS = 10V, ID = 80A
  • 高性能沟道技术可实现极低的 RDS(on)
  • 低栅极电荷
  • 高功率和高电流处理能力
  • 符合 AEC Q101 标准
  • 符合 RoHS 标准

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDB5800

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Y

60

6

N-Channel

Single

20

2.5

80

242

-

6

120

104

6625

$1.457

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