Low/Medium Voltage MOSFETs | FDB86563_F085

N 沟道，PowerTrench® MOSFET，60V，110A，1.8mΩ

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N 沟道，PowerTrench® MOSFET，60V，110A，1.8mΩ

  • 典型 RDS(on) = 1.6 mΩ（VGS = 10 V、ID = 80 A
    ）
  • 典型 Qg(tot) = 126 nC（VGS = 10 V、ID = 80 A
    ）
  • UIS 能力
  • 符合RoHS标准
  • 符合 AEC Q101 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB86563-F085

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CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Y

N-Channel

PowerTrench® T6

D2PAK

Low-Medium Voltage

Standard

0

Single

0

60

1.8

20

4

110

333

-

-

-

126

10100

18

150

2355

186

$1.5845

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可靠性数据

Die Related Summary Data

Device: FDB86563-F085

Equivalent to wafer fab process: T9

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T9

0

1733101746

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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