N 沟道,PowerTrench® MOSFET,150V,169A,6.3mΩ

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N 沟道,PowerTrench® MOSFET,150V,169A,6.3mΩ

  • This product is general usage and suitable for many different applications.

  • 典型值 rDS(on) = 5mΩ(VGS = 10V, ID = 80A
    时)
  • 典型值 Qg(tot) = 70nC(VGS = 10V, ID = 80
    时)
  • UIS 能力
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDBL0630N150

Active

CAD Model

Pb

A

H

P

TO-LL 8L

1

245

REEL

2000

Y

N-Channel

PowerTrench® T1

Power 1012 (TOLL)

Low-Medium Voltage

Standard

0

Single

0

150

6.3

±20

4

169

500

-

-

-

70

5805

10

323

536

16

$2.5137

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