MOSFETs | FDC5612

N 沟道 PowerTrench® MOSFET 60V，4.3A，55mΩ

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概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总体效能而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。与具有相当的 RDS(ON) 规格的其他 MOSFET 相比，此类 MOSFET 开关速度更快，门极电荷更低。因此，该 MOSFET 驱动简单，也更安全（即使在非常高的频率下亦是如此），DC/DC 电源设计具有更高的总体效能。

  • This product is general usage and suitable for many different applications.
  • 4.3 A, 60 V. RDS(ON) = 0.055 Ω@ VGS = 10 V
  • RDS(ON) = 0.064 Ω @ VGS = 6 V
  • 低栅极电荷（12.5nC，典型值）
  • 快速开关速度
  • 高性能沟道技术可实现极低的 RDS(ON)
  • SuperSOT™-6封装： 小尺寸（比标准 SO-8 小 72%）；薄型（1 mm 厚）

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC5612

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

60

55

N-Channel

Single

±20

4

4.3

1.6

-

-

-

12.5

650

$0.2

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