MOSFETs | FDC604P

P 沟道，PowerTrench® MOSFET，1.8V Specified，-20V，-5.5A，33mΩ

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概览

此 P 沟道 1.8V 指定 MOSFET 使用低压 PowerTrench 工艺。此产品非常适用于电池管理应用。

  • This product is general usage and suitable for many different applications.
  • -5.5 A, -20 V
  • RDS(on) = 33 mΩ @ VGS = -4.5V
  • RDS(on) = 43 mΩ @ VGS = -2.5V
  • RDS(on) = 60 mΩ @ VGS = -1.8V
  • 快速开关速度
  • 高性能沟道技术可实现极低的RDS(ON)

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC604P

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

-20

-

P-Channel

Single

8

-1.5

-5.5

1.6

43

33

17

19

1926

$0.1813

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