FDC606P

P 沟道，PowerTrench® MOSFET，1.8V 指定，-12V，-6A，26mΩ

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CAD模型

概览

此 P 沟道 1.8V 指定 MOSFET 使用低压 PowerTrench 工艺。此产品非常适用于电池管理应用。

应用

This product is general usage and suitable for many different applications.

特性

-6 A，-12V
R_DS(on) = 26 mΩ@ V_GS = -4.5 V
R_DS(on) = 35 mΩ@ V_GS = -2.5 V
R_DS(on) = 53 mΩ@ V_GS = -1.8 V
快速开关速度
高功率和高电流处理能力

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDC606P

Active

TSOT-23-6

419BL

260

REEL

3000

-12

P-Channel

Single

-1.5

-6

1.6

1699

$0.3504

产品型号:

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MOSFETs | FDC606P

P 沟道，PowerTrench® MOSFET，1.8V 指定，-12V，-6A，26mΩ

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