MOSFETs | FDC6303N

双 N 沟道，数字 FET，25V，0.68A，0.45Ω

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概览

此类双 N 沟道逻辑电平增强型场效应晶体管是使用高单元密度的 DMOS 专属技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻。此器件适合在低压应用中替代负载开关应用中的数字晶体管。因为无需偏置电阻，所以此类 N 沟道 FET 可以替代若干具有各种偏置电阻的数字晶体管，如 IMHxA 系列。

  • This product is general usage and suitable for many different applications.
  • -25V、-0.68A（连续值）、-2A（峰值）
  • RDS(ON) = 0.6 Ω @ VGS = 2.7 V
  • RDS(ON) = 0.45 Ω @ VGS= 4.5 V
  • 栅极驱动电平要求极低，从而可在3V电路中直接运行。 VGS(th) < 1.5V
    。
  • 栅-源齐纳二极管增强耐静电放电(ESD)能力。 >6kV人体模型
  • 用一个DMOS FET替代多个NPN数字晶体管（IMHxA系列）

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC6303N

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

25

-

N-Channel

Dual

8

1.5

0.68

0.9

Q1=Q2=600

Q1=Q2=450

3.5

1.64

50

$0.1387

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