MOSFETs | FDC6327C

双 N 和 P 沟道，PowerTrench® MOSFET，2.5V 指定

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概览

此类 N 和 P 沟道 2.5V 指定 MOSFET 是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持低门极电荷，实现卓越的开关性能。此类器件适用于无法采用更昂贵的 SO-8 和 TSSOP-8 封装的应用，可为其在非常小的占地面积中提供卓越的功率耗散。

  • This product is general usage and suitable for many different applications.
  • N沟道2.7A，20V。 RDS(on) = 0.08Ω @ VGS = 4.5V，RDS(on) = 0.12Ω @ VGS = 2.5V P沟道-1.6A，-20V。RDS(on) = 0.17Ω @VGS= -4.5V，RDS(on) = 0.25Ω @ V GS = -2.5V
  • P-Channel
     -1.6A, -20V
     RDS(on) = 0.17Ω @ VGS = -4.5V
     RDS(on) = 0.25Ω @ VGS = -2.5V
  • 开关速度快。
  • 低栅极电荷。
  • 高性能沟道技术可实现极低的RDS(ON) 。
  • SuperSOT™ -6封装： 小尺寸（比标准SO-8小72%）；薄型（1mm厚）。

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC6327C

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

±20

-

Complementary

Dual

8

±1.5

N:2.7 , P: -1.6

0.96

N:120, P:250

N: 80, P: 170

3.7

2.85

315

$0.1629

More Details

FDC6327C-F169

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Obsolete

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

20

250

Complementary

Dual

-

8

-1.9

0.96

N:120 P:250

N: 80, P: 170

-

-

325

Price N/A

More Details

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