MOSFETs | FDC6333C

N 和 P 沟道，PowerTrench® MOSFET，30V

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概览

此类 N 和 P 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的开关性能。此类器件适用于无法采用更昂贵的 SO-8 和 TSSOP-8 封装的应用，可为其在非常小的占地面积中提供卓越的功率耗散。

  • This product is general usage and suitable for many different applications.
  • Q1 2.5 A, 30V
  • RDS(on) = 95 mΩ@ VGS = 10 V
  • RDS(ON) = 150 mΩ @ VGS = 4.5 V
  • Q2 –2.0 A, 30V。
  • RDS(on) = 150 mΩ@ VGS = -10 V
  • RDS(on) = 220 mΩ @ VGS = -4.5 V
  • 低栅极电荷
  • 高性能沟道技术可实现极低的RDS(ON)
  • SuperSOT –6封装： 小尺寸（比标准SO-8小72%）；薄型（1mm厚）。

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC6333C

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

±25

N: 95, P: 150

Complementary

Dual

25

3

N:2.5 , P: -2.0

0.96

-

N: 150, P: 220

3.3

4.1

185

$0.1816

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