P 沟道,PowerTrench® MOSFET,-20V,-4A,100mΩ

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P 沟道,PowerTrench® MOSFET,-20V,-4A,100mΩ

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  • 典型 rDS(on) = 52.5 mΩ (VGS = –4.5 V、ID = –4A)
  • 典型 rDS(on) = 75.3 mΩ (VGS = –2.5 V、ID = –3.2 A)
  • 快速开关速度
  • 低栅极电荷(6.9nC典型值)
  • 高性能沟道技术可实现极低的rDS(on)
  • SuperSOTÞ–封装:小尺寸(比标准 SO-8 小 72%);超薄(1 mm 厚)。
  • 符合 RoHS 标准
  • 符合 AEC Q101

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC642P-F085

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

TSOT-23-6

Small Signal

Logic

0

Single

0

-20

-

8

-1.5

-4

1.2

75.3

52.5

-

6.9

700

-

-

-

-

Price N/A

More Details

FDC642P-F085P

Consult Sales Office

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Single

0

-20

-

8

-1.5

-4

1.2

75.3

52.5

-

6.9

700

-

-

-

-

$0.2665

More Details

FDC642P-F085PBK

Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

F

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

$0.1999

More Details

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