FDC654P

P 沟道，PowerTrench® MOSFET，逻辑电平，-30V，-3.6A，75mΩ

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概览

此 P 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench® 工艺生产的。此产品非常适用于电池管理应用。

应用

This product is general usage and suitable for many different applications.

特性

-3.6 A，-30 V
R_DS(ON) = 75 mΩ @ V_GS= 10 V
R_DS(ON) = 125 mΩ @ V_GS = -4.5 V
低栅极电荷（6.2nC，典型值）
高性能沟道技术可实现极低的r_DS(on)

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDC654P

Active

TSOT-23-6

419BL

260

REEL

3000

-30

P-Channel

Single

-3

-3.5

1.6

125

6.2

298

$0.1548

产品型号:

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MOSFETs | FDC654P

P 沟道，PowerTrench® MOSFET，逻辑电平，-30V，-3.6A，75mΩ

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