MOSFETs | FDC6561AN

双 N 沟道 PowerTrench® MOSFET，逻辑电平，30V，2.5A，95mΩ

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概览

这些 N 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持低门极电荷，实现出色的开关性能。这些器件非常适合需要小体积的所有应用、尤其是希望实现低成本 DC/DC 转换的电池供电系统。

  • This product is general usage and suitable for many different applications.
  • 2.5 A, 30 V
  • RDS(ON) = 0.095 Ω @ VGS = 10 V
  • RDS(ON) = 0.145 Ω @ VGS = 4.5 V
  • 极快速开关
  • 低栅极电荷（2.1nC，典型值）
  • SuperSOT™-6封装： 小尺寸（比标准SO-8封装小72%）；薄型（1mm厚）

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC6561AN

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

30

Q1=Q2=95

N-Channel

Dual

20

3

2.5

0.96

-

Q1=Q2=145

-

2.3

220

$0.1985

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