双 N 沟道 PowerTrench® MOSFET,逻辑电平,30V,2.5A,95mΩ

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概览

这些 N 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench® 工艺生产的,特别适用于最大程度降低导通电阻,同时保持低门极电荷,实现出色的开关性能。这些器件非常适合需要小体积的所有应用、尤其是希望实现低成本 DC/DC 转换的电池供电系统。

  • This product is general usage and suitable for many different applications.

  • 2.5 A, 30 V
  • RDS(ON) = 0.095 Ω @ VGS = 10 V
  • RDS(ON) = 0.145 Ω @ VGS = 4.5 V
  • 极快速开关
  • 低栅极电荷(2.1nC,典型值)
  • SuperSOT™-6封装: 小尺寸(比标准SO-8封装小72%);薄型(1mm厚)

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC6561AN

Active

CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Dual

0

30

Q1=Q2=95

20

3

2.5

0.96

-

Q1=Q2=145

-

2.3

220

-

-

-

-

$0.1985

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