FDC658AP

单 P 沟道，逻辑电平，PowerTrench® MOSFET，-30V，-4A，50mΩ

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CAD模型

概览

此 P 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench® 工艺生产的。此产品非常适用于电池管理应用。

应用

This product is general usage and suitable for many different applications.

特性

V_GS= -10 V，I_D = -4A时，最大r_DS(on) = 50mΩ
V_GS= -4.5 V，I_D = -3.4A时，最大r_DS(on) = 75mΩ
低栅极电荷
高性能沟道技术可实现极低的R_DS(ON)
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDC658AP

Active

TSOT-23-6

419BL

260

REEL

3000

-30

P-Channel

Single

-3

-4

1.6

4.9

470

$0.18

产品型号:

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MOSFETs | FDC658AP

单 P 沟道，逻辑电平，PowerTrench® MOSFET，-30V，-4A，50mΩ

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