MOSFETs | FDC8886

30V N沟道PowerTrench® MOSFET

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CAD Model

CAD模型

概览

此N沟道MOSFET采用飞兆半导体先进的Power Trench®工艺生产，这一先进工艺已针对rDS(on)开关性能进行了优化。

  • 笔记本电脑
  • VGS = 10 V，ID = 6.5 A时，最大rDS(on) = 23mΩ
  • VGS = 4.5 V，ID = 6.0 A时，最大rDS(on) = 36mΩ
  • 高性能沟道技术可实现极低的rDS(on)
  • 快速开关速度
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC8886

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

30

23

N-Channel

Single

20

3

6.5

1.6

-

36

-

2.5

348

$0.1517

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