N 沟道,PowerTrench® MOSFET,60V,50A,13.5mΩ

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N 沟道,PowerTrench® MOSFET,60V,50A,13.5mΩ

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  • rDS(ON) = 11.5 mΩ (典型值),VGS = 10 V,ID = 50 A
  • Qg(tot) = 22nC(典型值),VGS = 10V
  • 低米勒电荷
  • 低 QRR体二极管
  • UIS能力(单脉冲和重复脉冲)
  • 符合AEC Q101
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD13AN06A0-F085

Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

Small Signal

Standard

0

Single

0

60

13.5

±20

4

50

115

-

-

-

22

1350

6.4

15

260

90

$0.8316

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