N沟道Power Trench® MOSFET,100V,32A,0.036 ohm

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概览

  • This product is general usage and suitable for many different applications.
  • rDS(ON) = 32mΩ(典型值),VGS = 10V,ID = 32A
  • Qg(tot) = 18.5nC(典型值),VGS = 10V
  • 低密勒电荷
  • 低Qrr体二极管
  • UIS能力(单脉冲和重复脉冲)
  • 符合AEC Q101,以前的开发类型为82755
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD3682

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

100

36

N-Channel

Single

±20

20

5.5

95

-

60

-

18.5

1250

$0.4433

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