MOSFETs | FDD390N15A

N 沟道 PowerTrench® MOSFET 150V, 26A, 40mΩ

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概览

此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。

  • LED 电视
  • 消费型设备
  • RDS(on) = 33.5mΩ （典型值）@ VGS = 10V, ID = 26A
  • 快速开关速度
  • 低栅极电荷，QG = 14.3nC（典型值）
  • 高性能沟道技术可实现极低的 RDS(on)
  • 高功率和高电流处理能力
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD390N15A

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

150

40

N-Channel

Single

±20

4

26

63

-

-

-

14.3

965

$0.4464

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