FDD4685

P 沟道 PowerTrench® MOSFET，-40V，-23A，27mΩ

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CAD模型

概览

此 P 沟道 MOSFET 是使用 PowerTrench® 专属技术生产的，可提供低 rDS(on) 和良好的开关特性，为应用带来出色性能。

应用

This product is general usage and suitable for many different applications.

特性

V_GS = -10V，I_D = -8.4A时，最大R_DS(on) = 27mΩ
V_GS = -4.5V，I_D = -7A时，最大R_DS(on) = 35mΩ
高性能沟道技术可实现极低的r_DS(on)
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDD4685

Active

DPAK-3 / TO-252-3

369AS

260

REEL

2500

-40

P-Channel

Single

±20

-3

-32

1790

$0.5727

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MOSFETs | FDD4685

P 沟道 PowerTrench® MOSFET，-40V，-23A，27mΩ

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