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UniFETTM II MOSFET 是基于先进的平面条纹和 DMOS 技术的高压 MOSFET 系列。此先进的 MOSFET 系列在平面 MOSFET 中具有最小的导通电阻,同时可提供出色的开关性能和更高的雪崩能量强度。另外,内部门极电源 ESD 二极管使得 UniFET II MOSFET 能够承受 2kV 以上的 HBM 浪涌应力。此器件系列适用于开关电源转换器应用,如功率因数校正 (PFC)、平板显示屏 (FPD) TV 电源、ATX 和电子灯镇流器。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
FDD5N60NZTM
Active
Pb
A
H
P
DPAK-3 / TO-252-3
1
260
REEL
2500
Y
N-Channel
PowerTrench® T1
DPAK
High Voltage
Standard
0
Single
0
600
2000
±25
5
4
83
-
-
-
10
450
4
900
50
5
$0.3917
More Details
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可靠性数据
Die Related Summary Data
Device: FDD5N60NZTM
Equivalent to wafer fab process: 3C
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
3C
0
1676189102
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)