MOSFETs | FDD6685

30V，P 沟道，PowerTrench® MOSFET，-40A，20mΩ

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概览

此 P 沟道 MOSFET 是先进的 PowerTrench® 工艺的坚固门极版本。它针对需要较宽门极驱动电压额定值 (4.5V – 25V) 的电源管理应用进行了优化。

  • This product is general usage and suitable for many different applications.
  • -40A, -30V
  • RDS(ON) = 20 mΩ @ VGS = -10V
  • RDS(ON) = 30 mΩ @ VGS = -4.5V
  • 快速开关速度
  • 高性能沟道技术可实现极低的RDS(ON)
  • 高功率和高电流处理能力
  • 符合 AEC Q101

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD6685

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

-30

20

P-Channel

Single

25

-3

-40

52

-

30

13

17

1715

$0.466

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