FDD86102LZ

N 沟道屏蔽门极 PowerTrench® MOSFET 100 V，35 A，22.5 mΩ

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CAD模型

概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻和开关损耗。增加了 G-S 齐纳以提高 ESD 电压水平。

应用

This product is general usage and suitable for many different applications.

特性

V_GS = 10 V，I_D = 8 A时，最大r_DS(on) = 22.5 mΩ
V_GS = 4.5 V，I_D = 7A时，最大r_DS(on) = 31 mΩ
HBM ESD保护等级> 6 KV典型值（注4）
与其他沟道技术相比，具有极低的Qg和Qgd
快速开关速度
100%经过UIL测试
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDD86102LZ

Active

DPAK-3 / TO-252-3

369AS

260

REEL

2500

100

22.5

N-Channel

Single

±20

8.7

1157

$0.5965

产品型号:

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MOSFETs | FDD86102LZ

N 沟道屏蔽门极 PowerTrench® MOSFET 100 V，35 A，22.5 mΩ

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