N 沟道屏蔽门极 PowerTrench® MOSFET 100 V,35 A,22.5 mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的,特别适用于最大程度降低导通电阻和开关损耗。增加了 G-S 齐纳以提高 ESD 电压水平。

  • This product is general usage and suitable for many different applications.

  • VGS = 10 V,ID = 8 A时,最大rDS(on) = 22.5 mΩ
  • VGS = 4.5 V,ID = 7A时,最大rDS(on) = 31 mΩ
  • HBM ESD保护等级> 6 KV典型值(注4)
  • 与其他沟道技术相比,具有极低的Qg和Qgd
  • 快速开关速度
  • 100%经过UIL测试
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD86102LZ

Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Logic

0

Single

0

100

22.5

±20

3

35

54

-

31

-

8.7

1157

2.4

43

181

7.7

$0.5376

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