MOSFETs | FDD86113LZ

N 沟道，屏蔽门极，PowerTrench® MOSFET，100V，5.5 A，104 mΩ

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概览

此 N 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的开关性能。增加了 G-S 齐纳以提高 ESD 电压水平。

  • 消费型设备
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 104 mΩ at VGS = 10 V, ID = 4.2 A
  • Max rDS(on) = 156 mΩ at VGS = 4.5 V, ID = 3.4 A
  • HBM SD Protection Level > 6 kV typical (Note 4)
  • High Performance Trench Technology for Extremely Low rDS(on)
  • High Power and Current Handling Capability in a widely used surface mount package
  • 100% UIL Tested
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD86113LZ

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

100

104

N-Channel

Single

±20

3

5.5

29

-

156

-

1.9

213

$0.4255

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