N 沟道,屏蔽门极,PowerTrench® MOSFET,150 V,51 A,22 mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的,特别适用于最大程度降低导通电阻,同时保持卓越的开关性能。

  • This product is general usage and suitable for many different applications.
  • Shielded Gate MOSFET Technology
  • VGS = 10 V,ID = 8 A时,最大rDS(on) = 22mΩ
  • VGS = 6 V,ID = 6.5 A时,最大rDS(on) = 31 mΩ
  • 100%经过UIL测试
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD86250

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

150

22

N-Channel

Single

±20

4

51

132

-

-

-

12.8

1585

$0.8645

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