FDD86250

N 沟道，屏蔽门极，PowerTrench® MOSFET，150 V，51 A，22 mΩ

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CAD模型

概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的开关性能。

应用

This product is general usage and suitable for many different applications.

特性

Shielded Gate MOSFET Technology
V_GS = 10 V，I_D = 8 A时，最大r_DS(on) = 22mΩ
V_GS = 6 V，I_D = 6.5 A时，最大r_DS(on) = 31 mΩ
100%经过UIL测试
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDD86250

Active

DPAK-3 / TO-252-3

369AS

260

REEL

2500

150

N-Channel

Single

±20

132

12.8

1585

$0.8645

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MOSFETs | FDD86250

N 沟道，屏蔽门极，PowerTrench® MOSFET，150 V，51 A，22 mΩ

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