FDD86252

N 沟道屏蔽门极 PowerTrench® MOSFET 150 V，27 A，52 mΩ

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数据表

CAD模型

概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持出色的开关性能。

应用

AC-DC商用电源

特性

Shielded Gate MOSFET Technology
V_GS = 10 V，ID = 5 A_{时，最大r}DS(on)_{= 52 m}Ω
V_GS = 6 V，ID = 5 A_{时，最大r}DS(on)_{= 72 m}Ω
100%经过UIL测试
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDD86252

Active

DPAK-3 / TO-252-3

369AS

260

REEL

2500

150

N-Channel

Single

±20

6.3

741

$0.5166

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MOSFETs | FDD86252

N 沟道屏蔽门极 PowerTrench® MOSFET 150 V，27 A，52 mΩ

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