N 沟道 PowerTrench® MOSFET 60V,136 A,4.1 mΩ

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此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总体效能以及最大程度降低其开关节点噪声而设计,可以使用同步开关 PWM 控制器,也可以使用传统开关 PWM 控制器。它经过了优化,可实现低门极电荷、低 rDS(on)、快速开关和体二极管反向恢复性能。

  • AC-DC商用电源

  • VGS = 10 V,ID = 21.5 A时,最大rDS(on) = 4.1 mΩ
  • VGS = 8 V,ID = 19.5 A时,最大rDS(on) = 5 mΩ
  • 100%经过UIL测试
  • 符合RoHS标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

N-Channel

PowerTrench® T6

DPAK

Low-Medium Voltage

Standard

0

Single

0

60

4.1

±20

4

136

127

-

-

-

54

4767

12

43

1409

48

$0.4392

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