MOSFETs | FDG6332C

20V N&P沟道Power Trench® MOSFET

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概览

这些N和P沟道MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。这些器件经过专门设计，能以极小的尺寸提供极低的功耗，非常适合那些不宜采用更大更昂贵的TSSOP-8和SSOP-6封装的应用。

  • This product is general usage and suitable for many different applications.
  • Q1 0.7A, 20V. RDS(ON) = 300mΩ @ VGS = 4.5V RDS(ON) = 400mΩ @ VGS = 2.5V
  • Q2 -0.6A, -20V. RDS(ON) = 420mΩ @ VGS = -4.5V RDS(ON) = 630mΩ @ VGS = -2.5V
  • 低栅极电荷
  • 高性能沟道技术可实现极低的RDS(on)
  • SC70-60封装 小尺寸（比标准SSOT-6小51%）；薄型（1mm厚）。

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDG6332C

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Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

Y

±20

-

Complementary

Dual

12

±1.5

N: 0.7, P: -0.6

0.3

N:400,P:630

N: 300, P: 420

1.1

1.4

114

$0.1448

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