方案
按技术分类
设计
这些N和P沟道MOSFET采用飞兆半导体先进的PowerTrench工艺生产,这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。这些器件经过专门设计,能以极小的尺寸提供极低的功耗,非常适合那些不宜采用更大更昂贵的TSSOP-8和SSOP-6封装的应用。
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特性
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
FDG6332C
Active
Pb
A
H
P
SC-88-6 / SC-70-6 / SOT-363-6
1
260
REEL
3000
Y
Complementary
PowerTrench® T1
SC-6
Small Signal
Logic
0
Dual
0
±20
-
12
±1.5
N: 0.7, P: -0.6
0.3
N:400,P:630
N: 300, P: 420
1.1
1.4
114
-
-
-
-
$0.1448
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