High Voltage MOSFETs | FDH44N50

功率 MOSFET，N 沟道，UniFETTM，500 V，44 A，120 mΩ，TO-247

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概览

UniFETTM MOSFET 是基于平面条纹和 DMOS 技术的高压 MOSFET 系列。此 MOSFET 适用于降低导通电阻，提供更佳的开关性能以及更高的雪崩能量强度。此器件系列适用于开关电力转换器应用，如功率系数校正 (PFC)、平板显示屏 (FPD) TV 电源、ATX 和电子灯镇流器。

  • This product is general usage and suitable for many different applications.

  • 栅极电荷低 Qg 致使驱动要求简单（典型值） 90nC)
  • 经过改善的栅极、雪崩和较高的重加 dv/dt 强度
  • 降低 RDS(on) (110mΩ （典型值）@ VGS = 10V, ID = 22A)
  • 降低了米勒电容并实现低输入电容（典型值 Crss = 40pF)
  • 可在低 EMI 的情况下提高开关速度
  • 175oC 额定结温

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDH44N50

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

Y

N-Channel

PowerTrench® T1

TO-247

High Voltage

Standard

0

Single

0

500

120

±30

4

44

750

-

-

-

90

5335

31

14

645

40

$5.1328

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可靠性数据

Die Related Summary Data

Device: FDH44N50

Equivalent to wafer fab process: 2B

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

2B

0

59900249

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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