MOSFETs | FDM3622

N 沟道 PowerTrench® MOSFET 100V，4.4A，60mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持低门极电荷，实现出色的开关性能。

  • This product is general usage and suitable for many different applications.
  • 最大 rDS(on) = 60 mΩ（VGS = 10 V、ID = 4.4 A
    ）
  • 最大 rDS(on) = 80 mΩ（VGS = 6.0 V、ID = 3.8 A
    ）
  • 低密勒电荷
  • 低 QRR体二极管
  • 优化高频率时的效率
  • UIS 能力（单脉冲和重复脉冲）以前的开发类型 82744
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDM3622

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Active

CAD Model

Pb

A

H

P

WDFN-8

511DH

1

260

REEL

3000

Y

100

60

N-Channel

Single

±20

4

4.4

2.1

-

-

10

13

820

$0.5528

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