MOSFETs | FDMA1029PZ

双 P 沟道，PowerTrench® MOSFET，-20V，-3.1A，95mΩ

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概览

此器件专门设计为手机和其他超便携应用中电池充电开关的单封装解决方案。它具有两个独立的 P 沟道 MOSFET，且均具有低导通电阻，可实现最低的导电损耗。在典型的共源配置中连接时，可以实现双向电流流动。MicroFET™ 2x2 封装对于其物理尺寸来说提供了卓越的热性能，非常适合线性模式应用。

  • This product is general usage and suitable for many different applications.
  • -3.1 A、-20V：
  • RDS(ON) = 95 mΩ @ VGS = -4.5 V
  • RDS(ON) = 141 mΩ @ VGS = -2.5 V
  • 薄型 - 0.8mm最大值 - 采用新封装MicroFET 2x2 mm
  • HBM ESD保护等级> 2.5kV（参见数据手册注3）
  • 符合RoHS标准
  • 无卤素化合物和锑氧化物

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMA1029PZ

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Active

CAD Model

Pb

A

H

P

WDFN-6

511DA

1

260

REEL

3000

Y

-20

-

P-Channel

Dual

12

-1.5

-3.1

1.4

Q1=Q2=141

Q1=Q2=95

7

7

540

$0.2562

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