Low/Medium Voltage MOSFETs | FDMA1029PZ

双 P 沟道，PowerTrench® MOSFET，-20V，-3.1A，95mΩ

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概览

此器件专门设计为手机和其他超便携应用中电池充电开关的单封装解决方案。它具有两个独立的 P 沟道 MOSFET，且均具有低导通电阻，可实现最低的导电损耗。在典型的共源配置中连接时，可以实现双向电流流动。MicroFET™ 2x2 封装对于其物理尺寸来说提供了卓越的热性能，非常适合线性模式应用。

  • This product is general usage and suitable for many different applications.

  • -3.1 A、-20V：
  • RDS(ON) = 95 mΩ @ VGS = -4.5 V
  • RDS(ON) = 141 mΩ @ VGS = -2.5 V
  • 薄型 - 0.8mm最大值 - 采用新封装MicroFET 2x2 mm
  • HBM ESD保护等级> 2.5kV（参见数据手册注3）
  • 符合RoHS标准
  • 无卤素化合物和锑氧化物

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA1029PZ

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CAD Model

Pb

A

H

P

WDFN-6

511DA

1

260

REEL

3000

Y

P-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Dual

0

-20

-

12

-1.5

-3.1

1.4

Q1=Q2=141

Q1=Q2=95

-

7

540

2.4

-

-

-

$0.1725

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可靠性数据

Die Related Summary Data

Device: FDMA1029PZ

Equivalent to wafer fab process: TV

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TV

0

1399545734

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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