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Low/Medium Voltage MOSFETs | FDMA1032CZ
概览
此器件专门设计为手机和其他超便携应用中 DC/DC“开关”MOSFET 的单封装解决方案。它具有一个独立的 N 沟道和 P 沟道 MOSFET，且均具有低导通电阻，可实现最低的导电损耗。每个 MOSFET 的门极电荷也得以最大程度降低，可实现直接在控制设备中进行的高频开关。MicroFET 2x2 封装对于其物理尺寸来说提供了卓越的热性能，非常适合开关应用。
- This product is general usage and suitable for many different applications.
- Q1： N沟道3.7A，20V。 RDS(ON) = 68 mΩ @ VGS = 4.5VRDS(ON) = 86 mΩ @ VGS = 2.5V
- Q2: P-Channel
–3.1 A, –20V
RDS(ON) = 95 mΩ @ VGS = –4.5V
RDS(ON) = 141 mΩ @ VGS = –2.5V - Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm
- HBM ESD protection level > 2 kV (Note 3)
- RoHS Compliant
- Free from halogenated compounds and antimony oxides
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FDMA1032CZ
Active
Pb
A
H
P
WDFN-6
1
260
REEL
3000
Y
Complementary
PowerTrench® T1
Power 22
Low-Medium Voltage
Logic
0
Dual
0
±20
-
12
±1.5
N:3.7, P: -3.1
1.4
N: 86, P: 141
N: 68, P: 95
2.4
7
540
-
-
-
-
$0.1776
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