MOSFETs | FDMA2002NZ

双 N 沟道 PowerTrench® MOSFET 30V，2.9A，123mΩ

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概览

此器件专门设计用作蜂窝手持机和其他超便携应用中双开关要求的单封装方案。它具有两个独立的 N 沟道 MOSFET，且都具有低导通电阻，可实现最低的导电损耗。就其物理尺寸而言，MicroFET 2x2 具有出色的热性能，非常适合线性模式应用。

  • This product is general usage and suitable for many different applications.
  • 2.9 A，30 V
  • RDS(ON) = 123 mΩ @ VGS = 4.5 V
  • RDS(ON) = 140 mΩ @ VGS = 3.0 V
  • RDS(ON) = 163 mΩ @ VGS = 2.5 V
  • 薄型 – 最大0.8mm – 采用新的MicroFET 2x2 mm封装
  • HBM ESD保护等级 = 1.8kV（注3）
  • 符合RoHS标准
  • 无任何卤代化合物和锑氧化物

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMA2002NZ

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Active

CAD Model

Pb

A

H

P

WDFN-6

511DA

1

260

REEL

3000

Y

30

-

N-Channel

Dual

12

1.5

2.9

1.5

Q1=Q2=163

Q1=Q2=123

4.1

2.4

190

$0.3071

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