N 沟道,PowerTrench® MOSFET,1.5 V 指定,20V,9.5A,23mΩ

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概览

此单 N 沟道 MOSFET 是使用先进的 Power Trench 工艺设计的,可基于特制的 MicroFET 引线框架优化 rDS(ON) @ VGS = 1.5 V。

  • This product is general usage and suitable for many different applications.

  • VGS = 4.5 V,ID = 9.5 A时,Max rDS(on)
    = 23 mΩ
  • VGS = 2.5 V,ID = 8.0 A时,最大rDS(on) = 29mΩ
  • VGS = 1.8 V,ID = 4.0 A时,最大rDS(on) = 36mΩ
  • VGS = 1.5 V,ID = 2.0 A时,最大rDS(on) = 50mΩ
  • HBM静电放电保护等级为>2.5kV(注3)
  • 薄型 - 最大0.8 mm - 采用新的MicroFET 2X2 mm封装
  • 不含有卤化合物和氧化锑
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA410NZ

Active

CAD Model

Pb

A

H

P

WDFN-6

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Single

0

20

-

8

1

9.5

2.4

29

23

8.8

10

815

-

-

-

-

$0.3215

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