Low/Medium Voltage MOSFETs | FDMA410NZ

N 沟道，PowerTrench® MOSFET，1.5 V 指定，20V，9.5A，23mΩ

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概览

此单 N 沟道 MOSFET 是使用先进的 Power Trench 工艺设计的，可基于特制的 MicroFET 引线框架优化 rDS(ON) @ VGS = 1.5 V。

  • This product is general usage and suitable for many different applications.

  • VGS = 4.5 V，ID = 9.5 A时，Max rDS(on)
    = 23 mΩ
  • VGS = 2.5 V，ID = 8.0 A时，最大rDS(on) = 29mΩ
  • VGS = 1.8 V，ID = 4.0 A时，最大rDS(on) = 36mΩ
  • VGS = 1.5 V，ID = 2.0 A时，最大rDS(on) = 50mΩ
  • HBM静电放电保护等级为>2.5kV（注3）
  • 薄型 - 最大0.8 mm - 采用新的MicroFET 2X2 mm封装
  • 不含有卤化合物和氧化锑
  • 符合RoHS标准

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA410NZ

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CAD Model

Pb

A

H

P

WDFN-6

511CZ

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Single

0

20

-

8

1

9.5

2.4

29

23

8.8

10

815

-

-

-

-

$0.3215

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可靠性数据

Die Related Summary Data

Device: FDMA410NZ

Equivalent to wafer fab process: T5

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T5

0

1599906359

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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