Low/Medium Voltage MOSFETs | FDMA430NZ

单 N 沟道，2.5V 指定，PowerTrench® MOSFET，30V，5.0A，40mΩ

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概览

此单 N 沟道 MOSFET 是使用先进的 Power Trench 工艺设计的，可基于特制的 MicroFET 引线框架优化 RDS(on) @VGS=2.5V。

  • This product is general usage and suitable for many different applications.

  • RDS(on) = 40mΩ @ VGS = 4.5 V，ID = 5.0A
  • RDS(on) = 50mΩ@ VGS = 2.5 V，ID = 4.5A
  • 薄型 - 0.8mm最大值 - 采用新封装MicroFET 2x2 mm
  • HBM ESD保护电平> 2.5kV典型值 （注3）
  • 不含有卤化合物和氧化锑
  • 符合RoHS标准

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA430NZ

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CAD Model

Pb

A

H

P

WDFN-6

511CZ

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Single

0

30

-

12

1.5

5

2.4

50

40

19

7.3

600

-

-

-

-

$0.1863

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可靠性数据

Die Related Summary Data

Device: FDMA430NZ

Equivalent to wafer fab process: T5

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T5

0

1599906359

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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