FDMA430NZ

单 N 沟道，2.5V 指定，PowerTrench® MOSFET，30V，5.0A，40mΩ

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CAD模型

概览

此单 N 沟道 MOSFET 是使用先进的 Power Trench 工艺设计的，可基于特制的 MicroFET 引线框架优化 RDS(on) @VGS=2.5V。

应用

This product is general usage and suitable for many different applications.

特性

R_DS(on) = 40mΩ @ V_GS = 4.5 V，I_D = 5.0A
R_DS(on) = 50mΩ@ V_GS = 2.5 V，I_D = 4.5A
薄型 - 0.8mm最大值 - 采用新封装MicroFET 2x2 mm
HBM ESD保护电平> 2.5kV典型值（注3）
不含有卤化合物和氧化锑
符合RoHS标准

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMA430NZ

Active

WDFN-6

511CZ

260

REEL

3000

N-Channel

Single

1.5

2.4

7.3

600

$0.2767

产品型号:

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MOSFETs | FDMA430NZ

单 N 沟道，2.5V 指定，PowerTrench® MOSFET，30V，5.0A，40mΩ

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